Uniformity Study of GaAs-based Vertical-Cavity Surface-Emitting Laser Epiwafer Grown by MOCVD Technique

In this paper, a highly uniform 850 nm VCSEL epiwafer was grown by using MOCVD technique. The VCSEL quantum wells exhibit a peak emission wavelength of 839.5 nm. The grown epiwafer exhibits a Fabry-Perot cavity resonance at 846.5 nm. Various VCSEL devices fabricated from the center to the edge of th...

Full description

Saved in:
Bibliographic Details
Main Authors: Alias, M.S., Leisher, P.O., Choquette, K.D., Anuar, K., Siriani, D., Mitani, S., Razman Y, M., Fatah A. M, A.
Format: Conference Proceeding
Language:English
Subjects:
Distributed Bragg reflectors
Doping
Epitaxial layers
Gallium arsenide
Mirrors
MOCVD
Molecular beam epitaxial growth
Semiconductor materials
Surface emitting lasers
Vertical cavity surface emitting lasers
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper, a highly uniform 850 nm VCSEL epiwafer was grown by using MOCVD technique. The VCSEL quantum wells exhibit a peak emission wavelength of 839.5 nm. The grown epiwafer exhibits a Fabry-Perot cavity resonance at 846.5 nm. Various VCSEL devices fabricated from the center to the edge of the VCSEL epiwafer show similar trend for the L-I and output spectral characterizations. Devices fabricated at the edge of the epiwafer exhibits different characterization trends due to the growth limitations.
DOI:10.1109/SMELEC.2006.381052