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Molecular Dynamics Simulation of Octadecaborane Implantation into Silicon
We have carried out molecular dynamics simulations of monatomic B and octadecaborane cluster implantations into Si in order to make a comparative study and determine the advantages and drawbacks of each approach when used to fabricate shallow junctions. We have simulated a total of 1000 cascades of...
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| creator | Marques, L.A. Pelaz, L. Santos, I. Lopez, P. Aboy, M. Venezia, V.C. |
| description | We have carried out molecular dynamics simulations of monatomic B and octadecaborane cluster implantations into Si in order to make a comparative study and determine the advantages and drawbacks of each approach when used to fabricate shallow junctions. We have simulated a total of 1000 cascades of monatomic boron and an equivalent of 56 cascades of octadecaborane in order to have good statistics. We have obtained and analyzed the doping profiles and the amount and morphology of the damage produced within the target. Our simulation results indicate that the use of octadecaborane clusters for the implantation process shows several advantages with respect to monatomic B beams, mainly related to the reduction of channeling and the lower amount of residual damage at the end of range. |
| doi_str_mv | 10.1109/SCED.2007.383992 |
| format | conference_proceeding |
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Our simulation results indicate that the use of octadecaborane clusters for the implantation process shows several advantages with respect to monatomic B beams, mainly related to the reduction of channeling and the lower amount of residual damage at the end of range.</description><identifier>ISSN: 2163-4971</identifier><identifier>ISBN: 1424408687</identifier><identifier>ISBN: 9781424408689</identifier><identifier>EISSN: 2643-1300</identifier><identifier>DOI: 10.1109/SCED.2007.383992</identifier><language>eng</language><publisher>IEEE</publisher><subject>Boron ; Doping profiles ; Electronics ; Fabrication ; Hydrogen ; Ion implantation ; Molecular dynamics ; MOSFET circuits ; Silicon ; Simulation ; Statistics ; Surface morphology ; Tecnology ; Telecommunications</subject><ispartof>2007 Spanish Conference on Electron Devices, 2007, p.44-47</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4271164$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54555,54920,54932</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4271164$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Marques, L.A.</creatorcontrib><creatorcontrib>Pelaz, L.</creatorcontrib><creatorcontrib>Santos, I.</creatorcontrib><creatorcontrib>Lopez, P.</creatorcontrib><creatorcontrib>Aboy, M.</creatorcontrib><creatorcontrib>Venezia, V.C.</creatorcontrib><title>Molecular Dynamics Simulation of Octadecaborane Implantation into Silicon</title><title>2007 Spanish Conference on Electron Devices</title><addtitle>SCED</addtitle><description>We have carried out molecular dynamics simulations of monatomic B and octadecaborane cluster implantations into Si in order to make a comparative study and determine the advantages and drawbacks of each approach when used to fabricate shallow junctions. 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Our simulation results indicate that the use of octadecaborane clusters for the implantation process shows several advantages with respect to monatomic B beams, mainly related to the reduction of channeling and the lower amount of residual damage at the end of range.</description><subject>Boron</subject><subject>Doping profiles</subject><subject>Electronics</subject><subject>Fabrication</subject><subject>Hydrogen</subject><subject>Ion implantation</subject><subject>Molecular dynamics</subject><subject>MOSFET circuits</subject><subject>Silicon</subject><subject>Simulation</subject><subject>Statistics</subject><subject>Surface morphology</subject><subject>Tecnology</subject><subject>Telecommunications</subject><issn>2163-4971</issn><issn>2643-1300</issn><isbn>1424408687</isbn><isbn>9781424408689</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotjztrwzAUhUUf0DTNXujiP2D3XkmWrLHk0RpSMqSdw7Ukg4otBdsd8u9rSKcD33nAYewZoUAE83pcbzcFB9CFqIQx_IYtuJIiRwFwyx5RcimhUpW-mw1UIpdG4wNbjeMPAMxFRK0WrP5Mnbe_HQ3Z5hKpD3bMjqGfwRRSzFKbHexEzltq0kDRZ3V_7ihOVzvEKc3xLtgUn9h9S93oV_-6ZN-77df6I98f3uv12z4PqMspNyisdZU2VCmlfWmd4rwVVoIDT-Rm5mypG95IIrBel1I4WXpStlHaVGLJXq67wXt_Og-hp-Fyklwjzv__ACpoT30</recordid><startdate>200701</startdate><enddate>200701</enddate><creator>Marques, L.A.</creator><creator>Pelaz, L.</creator><creator>Santos, I.</creator><creator>Lopez, P.</creator><creator>Aboy, M.</creator><creator>Venezia, V.C.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200701</creationdate><title>Molecular Dynamics Simulation of Octadecaborane Implantation into Silicon</title><author>Marques, L.A. ; Pelaz, L. ; Santos, I. ; Lopez, P. ; Aboy, M. ; Venezia, V.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-913ccd879a8667e5cd622f3c40d0eaad67edc57b2b4aa0ce7543d45ea6cb67983</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Boron</topic><topic>Doping profiles</topic><topic>Electronics</topic><topic>Fabrication</topic><topic>Hydrogen</topic><topic>Ion implantation</topic><topic>Molecular dynamics</topic><topic>MOSFET circuits</topic><topic>Silicon</topic><topic>Simulation</topic><topic>Statistics</topic><topic>Surface morphology</topic><topic>Tecnology</topic><topic>Telecommunications</topic><toplevel>online_resources</toplevel><creatorcontrib>Marques, L.A.</creatorcontrib><creatorcontrib>Pelaz, L.</creatorcontrib><creatorcontrib>Santos, I.</creatorcontrib><creatorcontrib>Lopez, P.</creatorcontrib><creatorcontrib>Aboy, M.</creatorcontrib><creatorcontrib>Venezia, V.C.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Marques, L.A.</au><au>Pelaz, L.</au><au>Santos, I.</au><au>Lopez, P.</au><au>Aboy, M.</au><au>Venezia, V.C.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Molecular Dynamics Simulation of Octadecaborane Implantation into Silicon</atitle><btitle>2007 Spanish Conference on Electron Devices</btitle><stitle>SCED</stitle><date>2007-01</date><risdate>2007</risdate><spage>44</spage><epage>47</epage><pages>44-47</pages><issn>2163-4971</issn><eissn>2643-1300</eissn><isbn>1424408687</isbn><isbn>9781424408689</isbn><abstract>We have carried out molecular dynamics simulations of monatomic B and octadecaborane cluster implantations into Si in order to make a comparative study and determine the advantages and drawbacks of each approach when used to fabricate shallow junctions. We have simulated a total of 1000 cascades of monatomic boron and an equivalent of 56 cascades of octadecaborane in order to have good statistics. We have obtained and analyzed the doping profiles and the amount and morphology of the damage produced within the target. Our simulation results indicate that the use of octadecaborane clusters for the implantation process shows several advantages with respect to monatomic B beams, mainly related to the reduction of channeling and the lower amount of residual damage at the end of range.</abstract><pub>IEEE</pub><doi>10.1109/SCED.2007.383992</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 2163-4971 |
| ispartof | 2007 Spanish Conference on Electron Devices, 2007, p.44-47 |
| issn | 2163-4971 2643-1300 |
| language | eng |
| recordid | cdi_ieee_primary_4271164 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Boron Doping profiles Electronics Fabrication Hydrogen Ion implantation Molecular dynamics MOSFET circuits Silicon Simulation Statistics Surface morphology Tecnology Telecommunications |
| title | Molecular Dynamics Simulation of Octadecaborane Implantation into Silicon |
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