Investigation of Substrate Noise Coupling and Isolation Characteristics for a 0.35μM HV CMOS Technology

This paper presents the characterization of substrate noise coupling and the isolation capability of ohmic substrate contacts in a HV CMOS technology. Layout variations of contact sizes, distances, and several p+ guard structures are subject of this research. Metal shielded DUT fixtures have been de...

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Bibliographic Details
Main Authors: Pflanzl, W.C., Seebacher, E.
Format: Conference Proceeding
Language:English
Subjects:
CMOS technology
Crosstalk
Damping
Electrical resistance measurement
Fixtures
guard ring
HV CMOS
Isolation
Isolation technology
Radio frequency
Resistors
Semiconductor device modeling
Substrate coupling
Testing
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Summary:This paper presents the characterization of substrate noise coupling and the isolation capability of ohmic substrate contacts in a HV CMOS technology. Layout variations of contact sizes, distances, and several p+ guard structures are subject of this research. Metal shielded DUT fixtures have been developed to improve the reliability and accuracy of the measurements. All test cases are fabricated with a 0.35μm HV CMOS technology (Vmax
DOI:10.1109/MIXDES.2007.4286198