Modeling and Characterization of Program / Erasure Speed and Retention of TiN-gate MANOS (Si-Oxide-SiNx-Al2O3-Metal Gate) Cells for NAND Flash Memory

In this study, physical properties of different trapping nitrides were extracted, and the program efficiency of MANOS cell was explained. We also showed shallow traps were generated at trapping nitride by etching damage, and this could be cured resulting great improvement of cell performance. Lastly...

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Main Authors: Eun-Seok Choi, Hyun-Seung Yoo, Kyoung-Hwan Park, Se-Jun Kim, Jung-Ryul Ahn, Myung-Shik Lee, Young-Ok Hong, Suk-Goo Kim, Jae-Chul Om, Moon-Sig Joo, Seung-Ho Pyi, Seaung-Suk Lee, Seok-Kiu Lee, Gi-Hyun Bae
Format: Conference Proceeding
Language:English
Subjects:
Carbon capture and storage
Curing
Electrodes
Electron traps
Etching
Flash memory
Ionization
Nonvolatile memory
Tin
Tunneling
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Summary:In this study, physical properties of different trapping nitrides were extracted, and the program efficiency of MANOS cell was explained. We also showed shallow traps were generated at trapping nitride by etching damage, and this could be cured resulting great improvement of cell performance. Lastly, erasure mechanism of TiN-gate MANOS cell was discussed with some experimental and modeling results.
ISSN:2159-483X
DOI:10.1109/NVSMW.2007.4290591