Calculation of Transverse Magnetoresistance in Isotropic p-Type Polycrystalline Silicon

Calculation of the dependence of the transverse magnetoresistance in isotropic p-type polycrystalline silicon on a magnetic field is presented. The case is considered when holes relaxation is determined by scattering on both the grain boundaries potential barriers and the disordered net of silicon a...

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Bibliographic Details
Main Author: Moiseev, A.G.
Format: Conference Proceeding
Language:English
Subjects:
Charge carriers
Conductivity
Equations
Grain boundaries
isotropic p-type polycrystalline silicon
Kinetic theory
Magnetic analysis
Magnetic fields
Magnetoresistance
Scattering
Silicon
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Summary:Calculation of the dependence of the transverse magnetoresistance in isotropic p-type polycrystalline silicon on a magnetic field is presented. The case is considered when holes relaxation is determined by scattering on both the grain boundaries potential barriers and the disordered net of silicon atoms.
ISSN:1815-3712
DOI:10.1109/SIBEDM.2007.4292934