Split-gate Resurf Stepped Oxide (RSO) MOSFETs for 25V applications with record low gate-to-drain charge

This paper presents a split-gate version of the Resurf Stepped Oxide (RSO) MOSFET. Splitting the gate enables a drastic reduction of the gate-to-drain capacitance intrinsic to the RSO device concept while keeping all the benefits of the RESURF effect. We achieved a record on- resistance of 3.8mΩmm 2...

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Bibliographic Details
Main Authors: Goarin, P., Koops, G.E.J., van Dalen, R., Le Cam, C., Saby, J.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Electric resistance
MOSFETs
Power semiconductor devices
Shape
Silicon
Split gate flash memory cells
Switching converters
Switching loss
Voltage
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Summary:This paper presents a split-gate version of the Resurf Stepped Oxide (RSO) MOSFET. Splitting the gate enables a drastic reduction of the gate-to-drain capacitance intrinsic to the RSO device concept while keeping all the benefits of the RESURF effect. We achieved a record on- resistance of 3.8mΩmm 2 and gate-to-drain charge of 0.9nC.mm -2 at a breakdown voltage of 35V for a pitch of 1.3μm (0.8μm trench width). The switching losses of our split-gate RSO MOSFET are 4 times better than the best published data in the same voltage range.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2007.4294932