QDot and GaInNAs/GaAs Broadband Semiconductor Optical Amplifiers for Simultaneous Multiwavelength Amplification

The need for simultaneous multi-channel transmission in optical communication systems has led to a requirement of semiconductor optical amplifiers (SOAs) with flat gain over a broad range of wavelengths and minimum channel interspacing for the independent and simultaneous amplification of several di...

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Bibliographic Details
Main Authors: Rorison, J.M., Pozo, J., Vogiatzis, N., Qiu, Y.N., Tuomisto, P., Konttinen, J., Saarinen, M., Peng, C., Viheriala, J., Leinonen, T., Pessa, M.
Format: Conference Proceeding
Language:English
Subjects:
Gallium arsenide
Laser modes
Optical device fabrication
Optical fiber communication
Optical pulses
Pulse amplifiers
Quantum well lasers
Semiconductor lasers
Semiconductor optical amplifiers
Ultrafast optics
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Summary:The need for simultaneous multi-channel transmission in optical communication systems has led to a requirement of semiconductor optical amplifiers (SOAs) with flat gain over a broad range of wavelengths and minimum channel interspacing for the independent and simultaneous amplification of several different laser sources. In addition for ultra-high speed communication with femto-second pulses, composed of a spectrum of wavelengths, simultaneous multi-wavelength amplification is required. The goal of this paper is the modelling, fabrication and characterization of SOAs made from GaInNAs/GaAs quantum-well edge emitting lasers and InAs/GaAs QDot edge-emitting lasers. Both QDots and GaInNAs/GaAs quantum wells (QWs) exhibit broad gain for a range of temperatures and current as measured experimentally.
ISSN:2162-7339
DOI:10.1109/ICTON.2007.4296139