Atomic Layer Deposition of Al2O3, TiO2 and ZnO Films into High Aspect Ratio Pores

Atomic layer deposition (ALD) of aluminium, zinc and titanium oxides into high aspect ratio electrochemically etched pores is described. Macroporous silicon was fabricated by electrochemical etching. Aspect ratios of 50:1 were routinely obtained. commercial anodisc alumina pores were used for refere...

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Bibliographic Details
Main Authors: Sirvio, S., Sainiemi, L., Franssila, S., Grigoras, K.
Format: Conference Proceeding
Language:English
Subjects:
ALD
aluminium oxide
Aluminum oxide
anodic alumina
Atomic layer deposition
Biological materials
Coatings
Hafnium
micropores
nanopores
porous silicon
Scanning electron microscopy
Silicon
Titanium
titanium dioxide
Wet etching
Zinc oxide
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Summary:Atomic layer deposition (ALD) of aluminium, zinc and titanium oxides into high aspect ratio electrochemically etched pores is described. Macroporous silicon was fabricated by electrochemical etching. Aspect ratios of 50:1 were routinely obtained. commercial anodisc alumina pores were used for reference. ALD thin films Al 2 O 3 , TiO 2 and ZnO were deposited in the pores. The results were studied with scanning electron microscope (SEM). The layer thicknesses were close to the theoretical value calculated from the cycle number, indicating excellent conformality in high aspect ratio structures.
ISSN:2159-547X
DOI:10.1109/SENSOR.2007.4300182