Cavity-Through Deep Reactive Ion Etching of Directly-Bonded Silicon Wafers

Etched silicon wafers were directly bonded, and then the bonded silicon wafers were deeply etched by Bosch process through etched cavities. This cavity-through DRIE (deep reactive ion etching) was investigated after systematic study on plasma-assisted silicon direct bonding. The first half of this p...

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Bibliographic Details
Main Authors: Piljoong Kang, Tanaka, S., Esashi, M.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Deep reactive ion etching (DRIE)
Direct bonding
Etching
Hydrogen
Multilayer MEMS
Plasma applications
Plasma temperature
Plasma treatment
Silicon
Surface contamination
Surface treatment
Wafer bonding
Water
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Summary:Etched silicon wafers were directly bonded, and then the bonded silicon wafers were deeply etched by Bosch process through etched cavities. This cavity-through DRIE (deep reactive ion etching) was investigated after systematic study on plasma-assisted silicon direct bonding. The first half of this paper mainly reports the generation of voids in wafers directly bonded with N 2 or O 2 plasma treatment due to H 2 O release from hydroxy groups in low and high temperature annealing. The second half reports etch profiles and etch rates for cavity-through DRIE using different recipes. Cavity-through DRIE in conjunction with silicon direct bonding is practical and useful for multi-layer MEMS.
ISSN:2159-547X
DOI:10.1109/SENSOR.2007.4300189