Efficient Gallium-Arsenide Disk Laser

Means that may optimize the efficiency of semiconductor disk lasers (optically pumped vertical external-cavity surface-emitting lasers) are discussed: the direct pumping of the quantum wells (QWs), the optimization of the interaction of the QWs with pump and laser field and the reduction of resonato...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2007-10, Vol.43 (10), p.869-875
Main Authors: Beyertt, S.-S., Brauch, U., Demaria, F., Dhidah, N., Giesen, A., Kubler, T., Lorch, S., Rinaldi, F., Unger, P.
Format: Article
Language:English
Subjects:
Bragg reflectors
Dielectric coating
Dielectric losses
Disks
distributed Bragg reflector (DBR)
gallium arsenide (GaAs)
III-V semiconductor materials
in-well pumping
Laser excitation
Lasers
Optical pumping
Optical resonators
Optimization
Power generation
Pump lasers
Pumps
quantum well (QW)
Quantum well lasers
resonant pumping
semiconductor disk laser
Semiconductor lasers
Semiconductors
Surface emitting lasers
vertical external-cavity surface-emitting laser (VECSEL)
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Summary:Means that may optimize the efficiency of semiconductor disk lasers (optically pumped vertical external-cavity surface-emitting lasers) are discussed: the direct pumping of the quantum wells (QWs), the optimization of the interaction of the QWs with pump and laser field and the reduction of resonator losses by employing a dielectric/semiconductor Bragg reflector on the front face of the disk. GaAs-AlGaAs-quantum-well disk lasers designed accordingly achieved slope efficiencies of 67% and optical efficiencies of 55% (based on the absorbed pump power) with output powers well above 1 W and a pump absorption efficiency of 80%. With an additional simple pump re-imaging an output power of 1.6 W was realized with an optical efficiency of 50% related to the incident pump power.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2007.904074