Time-Resolved Luminescence of Epitaxial InP Nanowires on (111)Si

We observe a biexponential photoluminescence decay process of as-grown InP nanowires on a (111) silicon substrate. The decay characteristics can be explained through the effects of surface states.

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Bibliographic Details
Main Authors: Crankshaw, S., Reitzenstein, S., Chuang, L.C., Moewe, M., Munch, S., Hofmann, C., Forchel, A., Connie Chang-Hasnain
Format: Conference Proceeding
Language:English
Subjects:
Energy measurement
Indium phosphide
Luminescence
Nanowires
Performance evaluation
Photoluminescence
Radiative recombination
Silicon
Substrates
Temperature
Online Access:Request full text
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Description
Summary:We observe a biexponential photoluminescence decay process of as-grown InP nanowires on a (111) silicon substrate. The decay characteristics can be explained through the effects of surface states.
DOI:10.1109/INOW.2007.4302932