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Degradation Analysis of 2- \mu\hbox DFB Laser Using Optical Beam-Induced Current Technique
The degradation behavior of 2-mum wavelength distributed feedback lasers with a p- and n-type InP buried heterostructure during constant-power aging is investigated. The degradation mechanism is governed by diffused defects with a parallel direction in the crystal plane. Furthermore, it is clarified...
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Published in: | IEEE transactions on electron devices 2007-10, Vol.54 (10), p.2644-2649 |
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container_title | IEEE transactions on electron devices |
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creator | Takeshita, T. Sato, T. Mitsuhara, M. Kondo, Y. Sugo, M. Kato, K. |
description | The degradation behavior of 2-mum wavelength distributed feedback lasers with a p- and n-type InP buried heterostructure during constant-power aging is investigated. The degradation mechanism is governed by diffused defects with a parallel direction in the crystal plane. Furthermore, it is clarified that the epitaxial layers on the mesa affect both first- and second-stage degradations. |
doi_str_mv | 10.1109/TED.2007.904961 |
format | article |
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subjects | Aging Degradation failure analysis Gas lasers indium compounds Indium phosphide Laser applications Laser modes laser reliability Lasers photon beams quantum well lasers semiconductor lasers |
title | Degradation Analysis of 2- \mu\hbox DFB Laser Using Optical Beam-Induced Current Technique |
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