Radiation Hardening of Thermal Oxides on Silicon via Ion Implantation

Implantation of thermal oxide on silicon with 1016 N2+ cm-2 at an energy of 50 keV reduces the space charge buildup observed in the oxide when exposed subsequently to ionizing radiation. The component of radiation-induced charge buildup in the oxide attributable to the increase in fast surface state...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 1969-01, Vol.16 (6), p.203-206
Main Authors: Donovan, R. P., Simons, M., Monteith, L. K.
Format: Article
Language:English
Subjects:
Charge carrier lifetime
Electron mobility
Insulation
Ion implantation
Ionizing radiation
Laboratories
Nitrogen
Radiation hardening
Silicon
Space charge
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Summary:Implantation of thermal oxide on silicon with 1016 N2+ cm-2 at an energy of 50 keV reduces the space charge buildup observed in the oxide when exposed subsequently to ionizing radiation. The component of radiation-induced charge buildup in the oxide attributable to the increase in fast surface states at the oxide-silicon interface is largely unaffected.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.1969.4325527