Flash X-Ray Testing of ER3400 EAROMS

Flash X-ray testing of ER3400 MNOS memories demonstrates their memory volatility. Flash X-ray test data is presented for four bias conditions and two write pulse widths. A simple electrical screening technique is described which increases the memory vulnerability threshold. Permanent shifts in acces...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nuclear science 1983-01, Vol.30 (6), p.4285-4289
Main Authors: Abare, W. E., Riley, R. M., Thygeson, T. L.
Format: Article
Language:English
Subjects:
Aerospace testing
Defense industry
EPROM
Government
Instruments
Logic devices
Manufacturing
Read-write memory
Space vector pulse width modulation
Threshold voltage
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Flash X-ray testing of ER3400 MNOS memories demonstrates their memory volatility. Flash X-ray test data is presented for four bias conditions and two write pulse widths. A simple electrical screening technique is described which increases the memory vulnerability threshold. Permanent shifts in access time and memory reference voltage from accumulated doses are discussed.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.1983.4333124