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A New Class of Single Event Soft Errors
A new class of single event transient errors, referred to here as "single event disturb errors", is described. These errors are potentially as troublesome as single event upsets. Computer simulations demonstrate that disturb errors have critical charges less than or equal to those for logi...
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Published in: | IEEE transactions on nuclear science 1984-01, Vol.31 (6), p.1145-1148 |
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Format: | Article |
Language: | English |
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cited_by | cdi_FETCH-LOGICAL-c261t-c34f96b48681afcf0b7271b2bc771667e417a329b4bbe986c8e665906d8548a93 |
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cites | cdi_FETCH-LOGICAL-c261t-c34f96b48681afcf0b7271b2bc771667e417a329b4bbe986c8e665906d8548a93 |
container_end_page | 1148 |
container_issue | 6 |
container_start_page | 1145 |
container_title | IEEE transactions on nuclear science |
container_volume | 31 |
creator | Diehl-Nagle, Sherra E. |
description | A new class of single event transient errors, referred to here as "single event disturb errors", is described. These errors are potentially as troublesome as single event upsets. Computer simulations demonstrate that disturb errors have critical charges less than or equal to those for logic upset in all circuits, and rates approaching those for upset in state-of-the-art sRAM circuits with polysilicon resistor loads. The errors cannot be prevented by resistive decoupling, and elude many current single event error testing methods. |
doi_str_mv | 10.1109/TNS.1984.4333472 |
format | article |
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These errors are potentially as troublesome as single event upsets. Computer simulations demonstrate that disturb errors have critical charges less than or equal to those for logic upset in all circuits, and rates approaching those for upset in state-of-the-art sRAM circuits with polysilicon resistor loads. The errors cannot be prevented by resistive decoupling, and elude many current single event error testing methods.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.1984.4333472</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>IEEE</publisher><subject>Circuit testing ; Computer errors ; Computer simulation ; Drives ; Error correction ; Integrated circuit interconnections ; Logic ; Read-write memory ; Resistors ; Single event upset</subject><ispartof>IEEE transactions on nuclear science, 1984-01, Vol.31 (6), p.1145-1148</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c261t-c34f96b48681afcf0b7271b2bc771667e417a329b4bbe986c8e665906d8548a93</citedby><cites>FETCH-LOGICAL-c261t-c34f96b48681afcf0b7271b2bc771667e417a329b4bbe986c8e665906d8548a93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4333472$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Diehl-Nagle, Sherra E.</creatorcontrib><title>A New Class of Single Event Soft Errors</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>A new class of single event transient errors, referred to here as "single event disturb errors", is described. These errors are potentially as troublesome as single event upsets. Computer simulations demonstrate that disturb errors have critical charges less than or equal to those for logic upset in all circuits, and rates approaching those for upset in state-of-the-art sRAM circuits with polysilicon resistor loads. The errors cannot be prevented by resistive decoupling, and elude many current single event error testing methods.</description><subject>Circuit testing</subject><subject>Computer errors</subject><subject>Computer simulation</subject><subject>Drives</subject><subject>Error correction</subject><subject>Integrated circuit interconnections</subject><subject>Logic</subject><subject>Read-write memory</subject><subject>Resistors</subject><subject>Single event upset</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1984</creationdate><recordtype>article</recordtype><recordid>eNo9j81LwzAYxoMoWDfvgpfcPLXmbb6Po9QPGNuh8xySmEilrpIUxf_ejk1PDw_PB_wQugFSARB9v9t0FWjFKkYpZbI-QwVwrkrgUp2jghBQpWZaX6KrnN9nyzjhBbpb4U34xs1gc8ZjxF2_fxsCbr_CfsLdGCfcpjSmvEQX0Q45XJ90gV4e2l3zVK63j8_Nal36WsBUesqiFo4pocBGH4mTtQRXOy8lCCEDA2lprR1zLmglvApCcE3Eq-JMWU0XiBx_fRpzTiGaz9R_2PRjgJgDqJlBzQHUnEDnye1x0ocQ_ut_6S_ak0x3</recordid><startdate>19840101</startdate><enddate>19840101</enddate><creator>Diehl-Nagle, Sherra E.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19840101</creationdate><title>A New Class of Single Event Soft Errors</title><author>Diehl-Nagle, Sherra E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c261t-c34f96b48681afcf0b7271b2bc771667e417a329b4bbe986c8e665906d8548a93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1984</creationdate><topic>Circuit testing</topic><topic>Computer errors</topic><topic>Computer simulation</topic><topic>Drives</topic><topic>Error correction</topic><topic>Integrated circuit interconnections</topic><topic>Logic</topic><topic>Read-write memory</topic><topic>Resistors</topic><topic>Single event upset</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Diehl-Nagle, Sherra E.</creatorcontrib><collection>CrossRef</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Diehl-Nagle, Sherra E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A New Class of Single Event Soft Errors</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>1984-01-01</date><risdate>1984</risdate><volume>31</volume><issue>6</issue><spage>1145</spage><epage>1148</epage><pages>1145-1148</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>A new class of single event transient errors, referred to here as "single event disturb errors", is described. These errors are potentially as troublesome as single event upsets. Computer simulations demonstrate that disturb errors have critical charges less than or equal to those for logic upset in all circuits, and rates approaching those for upset in state-of-the-art sRAM circuits with polysilicon resistor loads. The errors cannot be prevented by resistive decoupling, and elude many current single event error testing methods.</abstract><pub>IEEE</pub><doi>10.1109/TNS.1984.4333472</doi><tpages>4</tpages></addata></record> |
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identifier | ISSN: 0018-9499 |
ispartof | IEEE transactions on nuclear science, 1984-01, Vol.31 (6), p.1145-1148 |
issn | 0018-9499 1558-1578 |
language | eng |
recordid | cdi_ieee_primary_4333472 |
source | IEEE Xplore (Online service) |
subjects | Circuit testing Computer errors Computer simulation Drives Error correction Integrated circuit interconnections Logic Read-write memory Resistors Single event upset |
title | A New Class of Single Event Soft Errors |
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