A Wideband CMOS RF Front-End Using AC-Coupled Current Mirrored Technique for Multiband Multistandard Mobile TV Tuners

In this paper, a wideband CMOS radio frequency (RF) front-end for various terrestrial mobile digital TV applications such as digital video broadcasting-handheld, terrestrial digital multimedia broadcasting, and integrated services digital broadcasting-terrestrial is proposed. To cover VHF III, UHF,...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2007-10, Vol.17 (10), p.739-741
Main Authors: NAM, Ilku, MOON, Hyunwon, BAE, Jong-Dae, PARK, Byeong-Ha
Format: Article
Language:English
Subjects:
Amplifiers
Applied sciences
Broadcasting
Broadcasting. Videocommunications. Audiovisual
Circuit properties
CMOS
current
Design. Technologies. Operation analysis. Testing
Digital
Digital TV
Digital video broadcasting
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Equipments and installations
Exact sciences and technology
front-end
Gain
Integrated circuits
mobile
Mobile TV
multiband
Multimedia communication
multistandard
Noise levels
Radio broadcasting
Radio frequencies
Radio frequency
radio frequency (RF)
Radiocommunications
Radiorelay links
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Telecommunications
Telecommunications and information theory
Television
Tuners
TV broadcasting
Video sharing
Wideband
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Summary:In this paper, a wideband CMOS radio frequency (RF) front-end for various terrestrial mobile digital TV applications such as digital video broadcasting-handheld, terrestrial digital multimedia broadcasting, and integrated services digital broadcasting-terrestrial is proposed. To cover VHF III, UHF, and L bands and reduce the silicon area simultaneously, it employs three low-noise amplifiers and single-to-differential transconductors and shares the rest of the RF front-end. By applying ac-coupled current mirrored technique, the proposed RF front-end has good wideband performance, high linearity, and precise gain control. It is fabricated in 0.18 mum CMOS process and draws 15 mA~20 mA from a 1.8 V supply voltage for each band. It shows a gain of more than 29 dB, noise figure of lower than 2.5 dB, IIP2 of more than 30 dBm, IIP3 of more than -10 dBm for entire bands.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2007.905645