Radiation Effects in High Electron Mobility Transistors: Total Dose Gamma Irradiation

AlGaAs/GaAs high electron mobility transistors (HEMTs) have been exposed to 90 Mrad(GaAs) of Co60 gamma radiation. Despite the heavy exposure, the peak transconductance for selected transistors was only diminished by approximately 4%. In addition, threshold voltage shifts of up to 80 mV were observe...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 1987-12, Vol.34 (6), p.1808-1811
Main Author: O'Loughlin, Michael J.
Format: Article
Language:English
Subjects:
Gallium arsenide
Gamma rays
HEMTs
Metallization
MODFET circuits
Probes
Radiation effects
Temperature
Threshold voltage
Transconductance
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Summary:AlGaAs/GaAs high electron mobility transistors (HEMTs) have been exposed to 90 Mrad(GaAs) of Co60 gamma radiation. Despite the heavy exposure, the peak transconductance for selected transistors was only diminished by approximately 4%. In addition, threshold voltage shifts of up to 80 mV were observed for both enhancement and depletion mode devices.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.1987.4337560