Carbon / high-k Trench Capacitor for the 40nm DRAM Generation

Carbon is proposed as a new FEOL material with high conductivity and thermal stability for CMOS integration. Here the application of carbon-based electrodes for future DRAM cell capacitors is presented. Trench capacitors with high-k dielectrics have been realized, fulfilling the requirements for ser...

Full description

Saved in:
Bibliographic Details
Main Authors: Aichmayr, G., Avellan, A., Duesberg, G.S., Kreupl, F., Kudelka, S., Liebau, M.
Format: Conference Proceeding
Language:English
Subjects:
capacitor
Capacitors
carbon
Conducting materials
Dielectric materials
DRAM
Electrodes
High K dielectric materials
high-k
High-K gate dielectrics
Organic materials
Random access memory
Thermal conductivity
Thermal stability
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Carbon is proposed as a new FEOL material with high conductivity and thermal stability for CMOS integration. Here the application of carbon-based electrodes for future DRAM cell capacitors is presented. Trench capacitors with high-k dielectrics have been realized, fulfilling the requirements for serial resistance, capacitance, leakage, reliability and temperature stability beyond the 40 nm technology node.
ISSN:0743-1562
DOI:10.1109/VLSIT.2007.4339686