Impact of Mobility Boosters (XsSOI, CESL, TiN gate) on the Performance of or oriented FDSOI cMOSFETs for the 32nm Node

• Main Authors: Andrieu, F., Aussenac, F., Feruglio, S., Eymery, J., Akatsu, T., Maury, P., Brevard, L., Tosti, L., Dansas, H., Rouchouze, E., Hartmann, J.-M., Faynot, O., Vandroux, L., Casse, M., Boeuf, F., Fenouillet-Beranger, C., Brunier, F., Cayrefourcq, I., Mazure, C., Ghibaudo, G., Deleonibus, S., Rochette, F., Barbe, J.-C., Buj, C., Bogumilowicz, Y., Allain, F., Delaye, V., Lafond, D.
• Format: Conference Proceeding
• Language: English
• Subjects: CMOSFETs; Paper technology; Tin; Very large scale integration
• ISSN: 0743-1562
• DOI: 10.1109/VLSIT.2007.4339723

For the first time, we integrated 1.9GPa eXtra-strained silicon on insulator (XsSOI) substrates in FDSOI n and pMOSFETs with gate length (L G ) and width (W) down to 25nm. Due to the high stress levels, significant I ON -I OFF improvements were obtained not only for nMOS but also for pMOS. We compared those results with the performance of devices strained by Contact Etch Stop Layer (CESL), for different device orientations ( or ) and feature sizes (L G , W). We demonstrate that, similarly to XsSOI, a single tensile CESL can improve both n and pMOS performance, leading to I ON,n =700 muA/mum and I ON,p =430 μA/μm at I OFF =140 pA/μm, this for L G