Gate First Metal-Aluminum-Nitride PMOS Electrodes for 32nm Low Standby Power Applications

The effective work function (EWF) of ternary metal-aluminum-nitride (M-Al-N, M=Ta, Ti, Mo, W) metal gate electrodes in high-k dielectric gate stacks has been investigated. With the addition of Al, the EWF can be tuned toward p-type (~5 eV) by 250 meV compared to the EWF of the binary metal nitride....

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Main Authors: Wen, H.-C., Song, S.C., Park, C.S., Burham, C., Bersuker, G., Choi, K., Quevedo-Lopez, M.A., Ju, B.S., Alshareef, H.N., Niimi, H., Park, H.B., Lysaght, P.S., Majhi, P., Lee, B.H., Jammy, R.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Application software
Capacitors
Degradation
Dielectric devices
Electrodes
High K dielectric materials
High-K gate dielectrics
Niobium compounds
Voltage
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Summary:The effective work function (EWF) of ternary metal-aluminum-nitride (M-Al-N, M=Ta, Ti, Mo, W) metal gate electrodes in high-k dielectric gate stacks has been investigated. With the addition of Al, the EWF can be tuned toward p-type (~5 eV) by 250 meV compared to the EWF of the binary metal nitride. Low threshold voltage (V t ) of ~ -0.35 V, an equivalent oxide thickness (EOT)~1.2 nm, and performance suitable for gate-first 32 nm low standby power applications are demonstrated.
ISSN:0743-1562
DOI:10.1109/VLSIT.2007.4339766