Total ionizing dose and single event effect studies of a 0.25μm CMOS serializer ASIC

A 0.25 μm CMOS serializer ASIC, designed using radiation tolerant layout practice, was exposed to proton beam at various flux levels and accumulated fluence over 1.9times10 15 protons/cm 2 (100 Mrad (Si)). The ASIC survived this total ionizing dose (TID) with no degradation in function. Single event...

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Bibliographic Details
Main Authors: Chu Xiang, Tiankuan Liu, Cheng-An Yang, Ping Gui, Chen, W., Junheng Zhang, Peiqing Zhu, Jingbo Ye, Stroynowski, R.
Format: Conference Proceeding
Language:English
Subjects:
Application specific integrated circuits
CMOS technology
Large Hadron Collider
Optical receivers
Optical transmitters
Particle beams
Protons
Single event upset
System testing
Vertical cavity surface emitting lasers
Online Access:Request full text
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Summary:A 0.25 μm CMOS serializer ASIC, designed using radiation tolerant layout practice, was exposed to proton beam at various flux levels and accumulated fluence over 1.9times10 15 protons/cm 2 (100 Mrad (Si)). The ASIC survived this total ionizing dose (TID) with no degradation in function. Single event effect (SEE) cross-sections are also calculated.
ISSN:2154-0519
2154-0535
DOI:10.1109/REDW.2007.4342553