TID and SEE Response of an Advanced Samsung 4Gb NAND Flash Memory

Initial total ionizing dose (TID) and single event heavy ion test results are presented for an unhardened commercial flash memory, fabricated with 63 nm technology. Results are that the parts survive to a TID of nearly 200 krad (SiCh), with a tractable soft error rate of about 10 -12 errors/bit-day,...

Full description

Saved in:
Bibliographic Details
Main Authors: Oldham, T.R., Friendlich, M., Howard, J.W., Berg, M.D., Kim, H.S., Irwin, T.L., LaBel, K.A.
Format: Conference Proceeding
Language:English
Subjects:
Consumer electronics
Flash memory
Manufacturing
NAND flash
NASA
Nonvolatile memory
Power supplies
Radiation effects
single event effects (SEE)
Space technology
Testing
total ionizing dose (TID)
USA Councils
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Initial total ionizing dose (TID) and single event heavy ion test results are presented for an unhardened commercial flash memory, fabricated with 63 nm technology. Results are that the parts survive to a TID of nearly 200 krad (SiCh), with a tractable soft error rate of about 10 -12 errors/bit-day, for the Adams ten percent worst case environment.
ISSN:2154-0519
2154-0535
DOI:10.1109/REDW.2007.4342570