Design of a 70 GHz Power Amplifier using a Digital InP HBT Process

A +15.1 dBm power amplifier (PA) operating at 70 GHz designed in a high speed digital InP HBT process is presented. The extraction of device models for the HBT's used in the PA design is discussed along with an electromagnetic simulation accounting for layout parasitics in the power cells. The...

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Main Authors: O'Sullivan, T., Minh Le, Partyka, P., Milano, R., Asbeck, P.M.
Format: Conference Proceeding
Language:eng ; jpn
Subjects:
Coplanar waveguides
Electromagnetic devices
Electromagnetic modeling
Heterojunction bipolar transistors
High power amplifiers
Indium phosphide
Power amplifiers
Power transmission lines
Process design
Topology
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creator O'Sullivan, T.
Minh Le
Partyka, P.
Milano, R.
Asbeck, P.M.
description A +15.1 dBm power amplifier (PA) operating at 70 GHz designed in a high speed digital InP HBT process is presented. The extraction of device models for the HBT's used in the PA design is discussed along with an electromagnetic simulation accounting for layout parasitics in the power cells. The design employs single-stage cascode amplifier topology in a finite ground CPW transmission line environment. The amplifier demonstrates the possibilities of utilising high speed digital InP HBT processes in the design of high frequency power amplifiers.
doi_str_mv 10.1109/BIPOL.2007.4351872
format conference_proceeding
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identifier ISSN: 1088-9299
ispartof 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2007, p.214-217
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language eng ; jpn
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source IEEE Xplore All Conference Series
subjects Coplanar waveguides
Electromagnetic devices
Electromagnetic modeling
Heterojunction bipolar transistors
High power amplifiers
Indium phosphide
Power amplifiers
Power transmission lines
Process design
Topology
title Design of a 70 GHz Power Amplifier using a Digital InP HBT Process
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