Evaluation of SiGeC HBT Varactor using different Collector access and Base-Collector junction Configuration in BiCMOS technologies

This paper is focused on the evaluation of SiGeC HBT varactor in BiCMOS technologies. First, we compare a standard collector-base junction varactor with the contribution of specific collector between a low cost SiGeC HBT module. From this, we suggest new types of structure with no additional mask wh...

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Bibliographic Details
Main Authors: Morandini, Y., Larchanche, J.-F., Gaquiere, C.
Format: Conference Proceeding
Language:English
Subjects:
BiCMOS integrated circuits
Capacitance
Costs
Germanium silicon alloys
Heterojunction bipolar transistors
Implants
Q factor
Silicon carbide
Silicon germanium
Varactors
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Summary:This paper is focused on the evaluation of SiGeC HBT varactor in BiCMOS technologies. First, we compare a standard collector-base junction varactor with the contribution of specific collector between a low cost SiGeC HBT module. From this, we suggest new types of structure with no additional mask which allows to keep high quality factor and to have a wide tuning range (3:1) between standard diode P+/Nwell and HBT varactor with SIC implant.
ISSN:1088-9299
2378-590X
DOI:10.1109/BIPOL.2007.4351880