InP Gunn Diodes with Forward Bias Heterocathode

Considered in this paper is the operation of InP Gunn diodes with Al x In 1-x As, Ga x In 1-x As and Ga x In 1-x P cathodes. Fundamental behaviors and operation specificity for InP TED's with forward bias have been found.

Saved in:
Bibliographic Details
Main Authors: Storozhenko, I.P., Arkusha, Yu.V., Prokhorov, E.D., Botsula, O.V.
Format: Conference Proceeding
Language:eng ; rus
Subjects:
Cathodes
Diodes
Gunn devices
Indium phosphide
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Considered in this paper is the operation of InP Gunn diodes with Al x In 1-x As, Ga x In 1-x As and Ga x In 1-x P cathodes. Fundamental behaviors and operation specificity for InP TED's with forward bias have been found.
DOI:10.1109/CRMICO.2007.4368651