InP Gunn Diodes with Forward Bias Heterocathode

Considered in this paper is the operation of InP Gunn diodes with Al x In 1-x As, Ga x In 1-x As and Ga x In 1-x P cathodes. Fundamental behaviors and operation specificity for InP TED's with forward bias have been found.

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Main Authors: Storozhenko, I.P., Arkusha, Yu.V., Prokhorov, E.D., Botsula, O.V.
Format: Conference Proceeding
Language:eng ; rus
Subjects:
Cathodes
Diodes
Gunn devices
Indium phosphide
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creator Storozhenko, I.P.
Arkusha, Yu.V.
Prokhorov, E.D.
Botsula, O.V.
description Considered in this paper is the operation of InP Gunn diodes with Al x In 1-x As, Ga x In 1-x As and Ga x In 1-x P cathodes. Fundamental behaviors and operation specificity for InP TED's with forward bias have been found.
doi_str_mv 10.1109/CRMICO.2007.4368651
format conference_proceeding
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language eng ; rus
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Cathodes
Diodes
Gunn devices
Indium phosphide
title InP Gunn Diodes with Forward Bias Heterocathode
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