A hybrid silicon evanescent photodetector

The work presented here is a silicon evanescent waveguide photodetector utilizing AlGalnAs quantum wells as an absorbing region, covering a wavelength range up to 1600 nm with a quantum efficiency of 90 %. The materials and processing are compatible with the hybrid silicon photonic integrated circui...

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Bibliographic Details
Main Authors: Hyundai Park, Fang, A.W., Jones, R., Cohen, O., Raday, O., Sysak, M.N., Paniccia, M.J., Bowers, J.E.
Format: Conference Proceeding
Language:English
Subjects:
Integrated circuit technology
Integrated optics
Optical materials
Optical waveguides
Photodetectors
Photonic integrated circuits
Quantum well lasers
Silicon
Stimulated emission
Waveguide lasers
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Summary:The work presented here is a silicon evanescent waveguide photodetector utilizing AlGalnAs quantum wells as an absorbing region, covering a wavelength range up to 1600 nm with a quantum efficiency of 90 %. The materials and processing are compatible with the hybrid silicon photonic integrated circuit (PIC) technology platform which has already demonstrated lasers and optical amplifiers.
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2007.4373710