Enhancement-mode In0.70Ga0.30As-channel MOSFETs with ALD Al2O3

In this paper, long-channel enhancement-mode In 0.70 Ga 0.30 As MOSFETs with ALD Al 2 O 3 is demonstrated. These devices show good output and pinch-off characteristics, have I on /I on of 10 5 , six orders of magnitude lower gate leakage than Schottky-gated devices, and a peak effective mobility of...

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Bibliographic Details
Main Authors: Yanning Sun, Kiewra, E.W., De Souza, J.P., Koester, S.J., Fogel, K.E., Sadana, D.K.
Format: Conference Proceeding
Language:English
Subjects:
Dielectrics
HEMTs
Lithography
MODFETs
MOSFETs
Optical buffering
Optical saturation
Sun
Transconductance
Very large scale integration
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Summary:In this paper, long-channel enhancement-mode In 0.70 Ga 0.30 As MOSFETs with ALD Al 2 O 3 is demonstrated. These devices show good output and pinch-off characteristics, have I on /I on of 10 5 , six orders of magnitude lower gate leakage than Schottky-gated devices, and a peak effective mobility of 1280 cm 2 /Vs. These results are promising for realizing scalable InGaAs-channel MOSFETs suitable for VLSI applications.
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2007.4373721