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Enhancement-mode In0.70Ga0.30As-channel MOSFETs with ALD Al2O3
In this paper, long-channel enhancement-mode In 0.70 Ga 0.30 As MOSFETs with ALD Al 2 O 3 is demonstrated. These devices show good output and pinch-off characteristics, have I on /I on of 10 5 , six orders of magnitude lower gate leakage than Schottky-gated devices, and a peak effective mobility of...
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| creator | Yanning Sun Kiewra, E.W. De Souza, J.P. Koester, S.J. Fogel, K.E. Sadana, D.K. |
| description | In this paper, long-channel enhancement-mode In 0.70 Ga 0.30 As MOSFETs with ALD Al 2 O 3 is demonstrated. These devices show good output and pinch-off characteristics, have I on /I on of 10 5 , six orders of magnitude lower gate leakage than Schottky-gated devices, and a peak effective mobility of 1280 cm 2 /Vs. These results are promising for realizing scalable InGaAs-channel MOSFETs suitable for VLSI applications. |
| doi_str_mv | 10.1109/DRC.2007.4373721 |
| format | conference_proceeding |
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| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1548-3770 |
| ispartof | 2007 65th Annual Device Research Conference, 2007, p.209-210 |
| issn | 1548-3770 2640-6853 |
| language | eng |
| recordid | cdi_ieee_primary_4373721 |
| source | IEEE Xplore All Conference Series |
| subjects | Dielectrics HEMTs Lithography MODFETs MOSFETs Optical buffering Optical saturation Sun Transconductance Very large scale integration |
| title | Enhancement-mode In0.70Ga0.30As-channel MOSFETs with ALD Al2O3 |
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