High-speed response of InAlAs/InGaAs M-S-M photodetectors at 1.3- and 1.5- mu m wavelengths: experiment and theory

The authors report the DC and pulse response, at 1.3- and 1.5- mu m wavelengths, of OMCVD-grown In/sub 0.53/Ga/sub 0.47/As/InP metal-semiconductor-metal (M-S-M) photodetectors which use a thin layer of lattice-matched In/sub 0.52/Al/sub 0.48/As for barrier enhancement. They also report the results o...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1989-11, Vol.36 (11), p.2624-2625
Main Authors: Soole, J.B.D., Schumacher, H., LeBlanc, H.P., Bhat, R., Koza, M.A.
Format: Article
Language:English
Subjects:
Bandwidth
Detectors
Diode lasers
Indium compounds
Indium gallium arsenide
Indium phosphide
Optical pulses
Photodetectors
Space vector pulse width modulation
Time factors
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Summary:The authors report the DC and pulse response, at 1.3- and 1.5- mu m wavelengths, of OMCVD-grown In/sub 0.53/Ga/sub 0.47/As/InP metal-semiconductor-metal (M-S-M) photodetectors which use a thin layer of lattice-matched In/sub 0.52/Al/sub 0.48/As for barrier enhancement. They also report the results of a computational study of the temporal response of the generic InGaAs M-S-M detector at these wavelengths, indicating how the device dimensions influence the bandwidth. Pulse responses of 55 ps FWHM (full width at half maximum) at 1.53 mu m and 48 ps at 1.31 mu m were obtained with gain switched diode laser pulses, indicating intrinsic bandwidths of approximately 8 and approximately 11 GHz, respectively, with a limiting system response width of approximately 40 ps. The authors present the results of 2D calculations of the transit time limited impulse response of the detector for 1.3- and 1.4- mu m incident radiation.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.43749