An intrinsic base resistance model for low and high currents

A highly physical model of the intrinsic base resistance for a bipolar junction transistor, which includes emitter crowding, base pushout, and conductivity modulation and is compatible with the charge-based large-signal bipolar transistor model, is presented. This model, which is an extension of the...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1990-01, Vol.37 (1), p.202-209
Main Authors: Jo, M., Burk, D.E.
Format: Article
Language:English
Subjects:
Applied sciences
Bipolar transistor circuits
Bipolar transistors
Boundary conditions
Conductivity
Diodes
Electronics
Equations
Exact sciences and technology
Frequency response
Power dissipation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Switching circuits
Transistors
Voltage
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Summary:A highly physical model of the intrinsic base resistance for a bipolar junction transistor, which includes emitter crowding, base pushout, and conductivity modulation and is compatible with the charge-based large-signal bipolar transistor model, is presented. This model, which is an extension of the Hauser model, is derived from a power dissipation calculation and verified with PISCES simulations of the low- to high-current region. It is then implemented in SLICE for CAD.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.43817