Predictive Simulation of AlGaN/GaN HEMTs

For the development of next-generation AlGaN/GaN based high electron mobility transistors (HEMTs) in industry, reliable software tools for DC and AC simulation are required. Our device simulator Minimos-NT was calibrated against experimental data for this purpose. Subsequently, AC and DC simulations...

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Bibliographic Details
Main Authors: Vitanov, S., Palankovski, V., Murad, S., Rodle, T., Quay, R., Selberherr, S.
Format: Conference Proceeding
Language:English
Subjects:
AC generators
Aluminum gallium nitride
Analytical models
Computational modeling
DC generators
Electrons
Gallium nitride
HEMTs
MODFETs
Predictive models
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Summary:For the development of next-generation AlGaN/GaN based high electron mobility transistors (HEMTs) in industry, reliable software tools for DC and AC simulation are required. Our device simulator Minimos-NT was calibrated against experimental data for this purpose. Subsequently, AC and DC simulations for both scaled devices from the same generation and new generation HEMTs were performed. A good accuracy for all relevant characteristics in comparison to measurement results is achieved.
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS07.2007.31