0.1 um n+-InAs-AlSb-InAs HEMT MMIC Technology for Phased-Array Applications

-A 0.1 mum n+-InAs-AlSb-InAs MMIC technology was developed for phased-array applications requiring ultralow power consumption. An n doped cap layer was utilized to provide lower access resistance and to reduce detrimental effects of cap layer etching during the process. As a result, the performance...

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Main Authors: Lin, C.H., Chou, Y.C., Lange, M.D., Yang, J.M., Nishimoto, M.Y., Lee, J., Nam, P.S., Boos, J.B., Bennett, B.R., Papanicolaou, N.A., Tsai, R.S., Gutierrez, A.L., Barsky, M.E., Chin, T.P., Wojtowicz, M., Lai, R., Oki, A.K.
Format: Conference Proceeding
Language:English
Subjects:
Gallium arsenide
HEMTs
Indium compounds
MMICs
Power dissipation
Radio frequency
Rough surfaces
Space technology
Surface resistance
Surface roughness
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Summary:-A 0.1 mum n+-InAs-AlSb-InAs MMIC technology was developed for phased-array applications requiring ultralow power consumption. An n doped cap layer was utilized to provide lower access resistance and to reduce detrimental effects of cap layer etching during the process. As a result, the performance and manufacturability can be enhanced. In this work, we have demonstrated excellent DC and RF uniformity on both devices and low-noise amplifiers (LNA) using 0.1 mum n + -InAs-AlSb-InAs HEMTs on 3-inch GaAs substrates. In addition, the LNAs also demonstrate excellent RF performance while operating at ultralow power (~1 mW). This accomplishment is crucial for phased-array applications requiring ultralow power dissipation.
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS07.2007.48