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0.1 um n+-InAs-AlSb-InAs HEMT MMIC Technology for Phased-Array Applications
-A 0.1 mum n+-InAs-AlSb-InAs MMIC technology was developed for phased-array applications requiring ultralow power consumption. An n doped cap layer was utilized to provide lower access resistance and to reduce detrimental effects of cap layer etching during the process. As a result, the performance...
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| creator | Lin, C.H. Chou, Y.C. Lange, M.D. Yang, J.M. Nishimoto, M.Y. Lee, J. Nam, P.S. Boos, J.B. Bennett, B.R. Papanicolaou, N.A. Tsai, R.S. Gutierrez, A.L. Barsky, M.E. Chin, T.P. Wojtowicz, M. Lai, R. Oki, A.K. |
| description | -A 0.1 mum n+-InAs-AlSb-InAs MMIC technology was developed for phased-array applications requiring ultralow power consumption. An n doped cap layer was utilized to provide lower access resistance and to reduce detrimental effects of cap layer etching during the process. As a result, the performance and manufacturability can be enhanced. In this work, we have demonstrated excellent DC and RF uniformity on both devices and low-noise amplifiers (LNA) using 0.1 mum n + -InAs-AlSb-InAs HEMTs on 3-inch GaAs substrates. In addition, the LNAs also demonstrate excellent RF performance while operating at ultralow power (~1 mW). This accomplishment is crucial for phased-array applications requiring ultralow power dissipation. |
| doi_str_mv | 10.1109/CSICS07.2007.48 |
| format | conference_proceeding |
| fullrecord | <record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_4384428</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4384428</ieee_id><sourcerecordid>4384428</sourcerecordid><originalsourceid>FETCH-ieee_primary_43844283</originalsourceid><addsrcrecordid>eNp9jk1rg0AYhN82DdQ0nnvoZe9h0_14xc1RxKIEoaB32dhNYjEqu-nBf5-lpNdeZoZ5YBiAV862nLPde1oVacXirWBeUD3AiqNA5ExI_giBkDFShSgXEO5i9ccEPkHAo4hR5ctnWDn3zZj0OQ5g76fJz4UMG1oMiaNJXx1-E8mzsiZlWaSkNu15GPvxNJPjaMnnWTvzRRNr9UySaeq7Vl-7cXBrWB5170x49xd4-8jqNKedMaaZbHfRdm5Q-otCyf_pDdCAPy4</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>0.1 um n+-InAs-AlSb-InAs HEMT MMIC Technology for Phased-Array Applications</title><source>IEEE Xplore All Conference Series</source><creator>Lin, C.H. ; Chou, Y.C. ; Lange, M.D. ; Yang, J.M. ; Nishimoto, M.Y. ; Lee, J. ; Nam, P.S. ; Boos, J.B. ; Bennett, B.R. ; Papanicolaou, N.A. ; Tsai, R.S. ; Gutierrez, A.L. ; Barsky, M.E. ; Chin, T.P. ; Wojtowicz, M. ; Lai, R. ; Oki, A.K.</creator><creatorcontrib>Lin, C.H. ; Chou, Y.C. ; Lange, M.D. ; Yang, J.M. ; Nishimoto, M.Y. ; Lee, J. ; Nam, P.S. ; Boos, J.B. ; Bennett, B.R. ; Papanicolaou, N.A. ; Tsai, R.S. ; Gutierrez, A.L. ; Barsky, M.E. ; Chin, T.P. ; Wojtowicz, M. ; Lai, R. ; Oki, A.K.</creatorcontrib><description>-A 0.1 mum n+-InAs-AlSb-InAs MMIC technology was developed for phased-array applications requiring ultralow power consumption. An n doped cap layer was utilized to provide lower access resistance and to reduce detrimental effects of cap layer etching during the process. As a result, the performance and manufacturability can be enhanced. In this work, we have demonstrated excellent DC and RF uniformity on both devices and low-noise amplifiers (LNA) using 0.1 mum n + -InAs-AlSb-InAs HEMTs on 3-inch GaAs substrates. In addition, the LNAs also demonstrate excellent RF performance while operating at ultralow power (~1 mW). This accomplishment is crucial for phased-array applications requiring ultralow power dissipation.</description><identifier>ISSN: 1550-8781</identifier><identifier>ISBN: 9781424410224</identifier><identifier>ISBN: 1424410223</identifier><identifier>EISSN: 2374-8443</identifier><identifier>EISBN: 1424410231</identifier><identifier>EISBN: 9781424410231</identifier><identifier>DOI: 10.1109/CSICS07.2007.48</identifier><language>eng</language><publisher>IEEE</publisher><subject>Gallium arsenide ; HEMTs ; Indium compounds ; MMICs ; Power dissipation ; Radio frequency ; Rough surfaces ; Space technology ; Surface resistance ; Surface roughness</subject><ispartof>2007 IEEE Compound Semiconductor Integrated Circuits Symposium, 2007, p.1-4</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4384428$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,778,782,787,788,2054,27912,54542,54907,54919</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4384428$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Lin, C.H.</creatorcontrib><creatorcontrib>Chou, Y.C.</creatorcontrib><creatorcontrib>Lange, M.D.</creatorcontrib><creatorcontrib>Yang, J.M.</creatorcontrib><creatorcontrib>Nishimoto, M.Y.</creatorcontrib><creatorcontrib>Lee, J.</creatorcontrib><creatorcontrib>Nam, P.S.</creatorcontrib><creatorcontrib>Boos, J.B.</creatorcontrib><creatorcontrib>Bennett, B.R.</creatorcontrib><creatorcontrib>Papanicolaou, N.A.</creatorcontrib><creatorcontrib>Tsai, R.S.</creatorcontrib><creatorcontrib>Gutierrez, A.L.</creatorcontrib><creatorcontrib>Barsky, M.E.</creatorcontrib><creatorcontrib>Chin, T.P.</creatorcontrib><creatorcontrib>Wojtowicz, M.</creatorcontrib><creatorcontrib>Lai, R.</creatorcontrib><creatorcontrib>Oki, A.K.</creatorcontrib><title>0.1 um n+-InAs-AlSb-InAs HEMT MMIC Technology for Phased-Array Applications</title><title>2007 IEEE Compound Semiconductor Integrated Circuits Symposium</title><addtitle>CSICS</addtitle><description>-A 0.1 mum n+-InAs-AlSb-InAs MMIC technology was developed for phased-array applications requiring ultralow power consumption. An n doped cap layer was utilized to provide lower access resistance and to reduce detrimental effects of cap layer etching during the process. As a result, the performance and manufacturability can be enhanced. In this work, we have demonstrated excellent DC and RF uniformity on both devices and low-noise amplifiers (LNA) using 0.1 mum n + -InAs-AlSb-InAs HEMTs on 3-inch GaAs substrates. In addition, the LNAs also demonstrate excellent RF performance while operating at ultralow power (~1 mW). This accomplishment is crucial for phased-array applications requiring ultralow power dissipation.</description><subject>Gallium arsenide</subject><subject>HEMTs</subject><subject>Indium compounds</subject><subject>MMICs</subject><subject>Power dissipation</subject><subject>Radio frequency</subject><subject>Rough surfaces</subject><subject>Space technology</subject><subject>Surface resistance</subject><subject>Surface roughness</subject><issn>1550-8781</issn><issn>2374-8443</issn><isbn>9781424410224</isbn><isbn>1424410223</isbn><isbn>1424410231</isbn><isbn>9781424410231</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNp9jk1rg0AYhN82DdQ0nnvoZe9h0_14xc1RxKIEoaB32dhNYjEqu-nBf5-lpNdeZoZ5YBiAV862nLPde1oVacXirWBeUD3AiqNA5ExI_giBkDFShSgXEO5i9ccEPkHAo4hR5ctnWDn3zZj0OQ5g76fJz4UMG1oMiaNJXx1-E8mzsiZlWaSkNu15GPvxNJPjaMnnWTvzRRNr9UySaeq7Vl-7cXBrWB5170x49xd4-8jqNKedMaaZbHfRdm5Q-otCyf_pDdCAPy4</recordid><startdate>200710</startdate><enddate>200710</enddate><creator>Lin, C.H.</creator><creator>Chou, Y.C.</creator><creator>Lange, M.D.</creator><creator>Yang, J.M.</creator><creator>Nishimoto, M.Y.</creator><creator>Lee, J.</creator><creator>Nam, P.S.</creator><creator>Boos, J.B.</creator><creator>Bennett, B.R.</creator><creator>Papanicolaou, N.A.</creator><creator>Tsai, R.S.</creator><creator>Gutierrez, A.L.</creator><creator>Barsky, M.E.</creator><creator>Chin, T.P.</creator><creator>Wojtowicz, M.</creator><creator>Lai, R.</creator><creator>Oki, A.K.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200710</creationdate><title>0.1 um n+-InAs-AlSb-InAs HEMT MMIC Technology for Phased-Array Applications</title><author>Lin, C.H. ; Chou, Y.C. ; Lange, M.D. ; Yang, J.M. ; Nishimoto, M.Y. ; Lee, J. ; Nam, P.S. ; Boos, J.B. ; Bennett, B.R. ; Papanicolaou, N.A. ; Tsai, R.S. ; Gutierrez, A.L. ; Barsky, M.E. ; Chin, T.P. ; Wojtowicz, M. ; Lai, R. ; Oki, A.K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_43844283</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Gallium arsenide</topic><topic>HEMTs</topic><topic>Indium compounds</topic><topic>MMICs</topic><topic>Power dissipation</topic><topic>Radio frequency</topic><topic>Rough surfaces</topic><topic>Space technology</topic><topic>Surface resistance</topic><topic>Surface roughness</topic><toplevel>online_resources</toplevel><creatorcontrib>Lin, C.H.</creatorcontrib><creatorcontrib>Chou, Y.C.</creatorcontrib><creatorcontrib>Lange, M.D.</creatorcontrib><creatorcontrib>Yang, J.M.</creatorcontrib><creatorcontrib>Nishimoto, M.Y.</creatorcontrib><creatorcontrib>Lee, J.</creatorcontrib><creatorcontrib>Nam, P.S.</creatorcontrib><creatorcontrib>Boos, J.B.</creatorcontrib><creatorcontrib>Bennett, B.R.</creatorcontrib><creatorcontrib>Papanicolaou, N.A.</creatorcontrib><creatorcontrib>Tsai, R.S.</creatorcontrib><creatorcontrib>Gutierrez, A.L.</creatorcontrib><creatorcontrib>Barsky, M.E.</creatorcontrib><creatorcontrib>Chin, T.P.</creatorcontrib><creatorcontrib>Wojtowicz, M.</creatorcontrib><creatorcontrib>Lai, R.</creatorcontrib><creatorcontrib>Oki, A.K.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lin, C.H.</au><au>Chou, Y.C.</au><au>Lange, M.D.</au><au>Yang, J.M.</au><au>Nishimoto, M.Y.</au><au>Lee, J.</au><au>Nam, P.S.</au><au>Boos, J.B.</au><au>Bennett, B.R.</au><au>Papanicolaou, N.A.</au><au>Tsai, R.S.</au><au>Gutierrez, A.L.</au><au>Barsky, M.E.</au><au>Chin, T.P.</au><au>Wojtowicz, M.</au><au>Lai, R.</au><au>Oki, A.K.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>0.1 um n+-InAs-AlSb-InAs HEMT MMIC Technology for Phased-Array Applications</atitle><btitle>2007 IEEE Compound Semiconductor Integrated Circuits Symposium</btitle><stitle>CSICS</stitle><date>2007-10</date><risdate>2007</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>1550-8781</issn><eissn>2374-8443</eissn><isbn>9781424410224</isbn><isbn>1424410223</isbn><eisbn>1424410231</eisbn><eisbn>9781424410231</eisbn><abstract>-A 0.1 mum n+-InAs-AlSb-InAs MMIC technology was developed for phased-array applications requiring ultralow power consumption. An n doped cap layer was utilized to provide lower access resistance and to reduce detrimental effects of cap layer etching during the process. As a result, the performance and manufacturability can be enhanced. In this work, we have demonstrated excellent DC and RF uniformity on both devices and low-noise amplifiers (LNA) using 0.1 mum n + -InAs-AlSb-InAs HEMTs on 3-inch GaAs substrates. In addition, the LNAs also demonstrate excellent RF performance while operating at ultralow power (~1 mW). This accomplishment is crucial for phased-array applications requiring ultralow power dissipation.</abstract><pub>IEEE</pub><doi>10.1109/CSICS07.2007.48</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1550-8781 |
| ispartof | 2007 IEEE Compound Semiconductor Integrated Circuits Symposium, 2007, p.1-4 |
| issn | 1550-8781 2374-8443 |
| language | eng |
| recordid | cdi_ieee_primary_4384428 |
| source | IEEE Xplore All Conference Series |
| subjects | Gallium arsenide HEMTs Indium compounds MMICs Power dissipation Radio frequency Rough surfaces Space technology Surface resistance Surface roughness |
| title | 0.1 um n+-InAs-AlSb-InAs HEMT MMIC Technology for Phased-Array Applications |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T23%3A34%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=0.1%20um%20n+-InAs-AlSb-InAs%20HEMT%20MMIC%20Technology%20for%20Phased-Array%20Applications&rft.btitle=2007%20IEEE%20Compound%20Semiconductor%20Integrated%20Circuits%20Symposium&rft.au=Lin,%20C.H.&rft.date=2007-10&rft.spage=1&rft.epage=4&rft.pages=1-4&rft.issn=1550-8781&rft.eissn=2374-8443&rft.isbn=9781424410224&rft.isbn_list=1424410223&rft_id=info:doi/10.1109/CSICS07.2007.48&rft.eisbn=1424410231&rft.eisbn_list=9781424410231&rft_dat=%3Cieee_CHZPO%3E4384428%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-ieee_primary_43844283%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4384428&rfr_iscdi=true |