Characterization of multilayer self-organized InAs quantum dot embedded waveguides at 1.3 and 1.5 μm

In this paper, we characterized the electro-optic coefficient and loss of multilayer InAs quantum dot laser structures at 1309 and 1515 nm. Quantum dot waveguides were grown by molecular beam epitaxy, where the active region is formed by three or five layers of self-assembled InAs QDs. Loss characte...

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Bibliographic Details
Main Authors: Akca, B. I., Dana, A., Aydinli, A., Rossetti, M., Li, L., Fiore, A., Dagli, N.
Format: Conference Proceeding
Language:English
Subjects:
Lasers and electrooptics
Nonhomogeneous media
Optical modulation
Optical refraction
Optical waveguides
Quantum dot lasers
Quantum dots
Tunable circuits and devices
Voltage
Waveguide lasers
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Summary:In this paper, we characterized the electro-optic coefficient and loss of multilayer InAs quantum dot laser structures at 1309 and 1515 nm. Quantum dot waveguides were grown by molecular beam epitaxy, where the active region is formed by three or five layers of self-assembled InAs QDs. Loss characterization were carried out by using a 1.3 μm light from a thermally tunable laser. Transmission through the device was recorded as a function of wavelength. Loss coefficient is found to be wavelength and bias voltage dependent.
DOI:10.1109/CLEOE-IQEC.2007.4386080