Fabrication and characterization of GaAs/AlGaAs planar resonant tunneling transistor

We have demonstrated electron transport in enhancement mode in-plane-gate (IPG) quantum dot (QD) transistors. A deep etched trench allows a large positive bias on the IPG, with negligible leakage current. Such enhancement mode operation has made it possible to populate ultra-small QDs with electrons...

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Bibliographic Details
Main Authors: SeungHun Son, JungIl Lee, YongJu Park, YunSeop Yu, SungWoo Hwang, Doyal Ahn
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Electrons
Energy states
Etching
Fabrication
Gallium arsenide
In-plane-gate
Quantum computing
Quantum dots
resonant tunneling
Resonant tunneling devices
SET
Transistors
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Summary:We have demonstrated electron transport in enhancement mode in-plane-gate (IPG) quantum dot (QD) transistors. A deep etched trench allows a large positive bias on the IPG, with negligible leakage current. Such enhancement mode operation has made it possible to populate ultra-small QDs with electrons. Strong NDR peaks and SET are observed in a wide gate bias window. The position of the NDR peaks systematically moves with the change of gate bias until, and also after the SET regime is reached. The size of the QD is estimated from the SET data, giving quantum energy level spacing consistent with the evolved NDR positions.
DOI:10.1109/NMDC.2006.4388712