Defect analysis of N-doped p-type ZnO film fabricated by magnetron sputtering via photoluminescence spectra

ZnO is a promising material to make high efficient ultraviolet (UV) or blue light emitting diodes (LEDs) due to its large binding energy and energy bandgap. In present study, we prepared an N-doped p-type ZnO thin film on (100) silicon substrate by RF magnetron sputtering in the mixture ambient of N...

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Bibliographic Details
Main Authors: Hu-Jie Jin, Deok-Kyu Kim, Choon-Bae Park
Format: Conference Proceeding
Language:English
Subjects:
defect
Light emitting diodes
Magnetic analysis
Magnetic materials
N-doped p-type ZnO film
Photoluminescence
photoluminescence(PL)
Photonic band gap
RF magnetron sputtering
Semiconductor thin films
Silicon
Sputtering
Substrates
Zinc oxide
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Summary:ZnO is a promising material to make high efficient ultraviolet (UV) or blue light emitting diodes (LEDs) due to its large binding energy and energy bandgap. In present study, we prepared an N-doped p-type ZnO thin film on (100) silicon substrate by RF magnetron sputtering in the mixture ambient of N 2 and O 2 . accompanying with in-situ annealing at low pressure of 10Torr in O 2 at 800degC. Photoluminescence (PL) analysis of the film showed UV emission related to exciton and donor-acceptor pair transition (DAP) and visible emission related to various kinds of defects. Via PL spectra analysis the reason of p-type conversion of ZnO thin film can be explained, which is in favor of getting high quality p-type ZnO films.
DOI:10.1109/NMDC.2006.4388893