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Fabrication of Cylindrical Nanopores and Nanopore Arrays in Silicon-On-Insulator Substrates

Electron-beam lithography and reactive ion etching were used to process silicon-on-insulator substrates for the fabrication of single cylindrical high-aspect-ratio solid-state nanopores and high-packing-density nanopore arrays. Minimum pore diameters of 40 nm were readily achieved with a high yield....

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Bibliographic Details
Published in:Journal of microelectromechanical systems 2007-12, Vol.16 (6), p.1419-1428
Main Authors: Petrossian, L., Wilk, S.J., Joshi, P., Hihath, S., Goodnick, S.M., Thornton, T.J.
Format: Article
Language:English
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Summary:Electron-beam lithography and reactive ion etching were used to process silicon-on-insulator substrates for the fabrication of single cylindrical high-aspect-ratio solid-state nanopores and high-packing-density nanopore arrays. Minimum pore diameters of 40 nm were readily achieved with a high yield. The electrolyte concentration dependence of ion transport through single nanopores was measured for pores with diameters ranging from 40 to 140 nm. Measured single-nanopore conductances in high salt concentrations were compared to a simple model using a cylindrical resistance path and bulk solution conductivity. Electrochemical impedance spectroscopy was used to study the ac response of the device.
ISSN:1057-7157
1941-0158
DOI:10.1109/JMEMS.2007.908435