Ferroelectric Thin-Film Devices: Failure Mechanisms and New Prototype Nano-Structures

Several fundamental physics problems concerning ferroelectric thin films are discussed with direct application to industry problems. The first is a model of dielectric breakdown under d.c. voltage stressing, extended from single capacitor films to multilayer capacitors (MLCs). The second is an analy...

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Bibliographic Details
Main Authors: Scott, J.F., Morrison, F.D., Hoo, Y.K., Milliken, A.D., Fan, H.J., Kawasaki, S., Miyake, M., Tatsuta, T., Tsuji, O.
Format: Conference Proceeding
Language:English
Subjects:
Capacitors
Dielectric thin films
Failure analysis
Ferroelectric films
Ferroelectric materials
Nanoscale devices
Physics
Prototypes
Random access memory
Thin film devices
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Summary:Several fundamental physics problems concerning ferroelectric thin films are discussed with direct application to industry problems. The first is a model of dielectric breakdown under d.c. voltage stressing, extended from single capacitor films to multilayer capacitors (MLCs). The second is an analysis of flash-over (arcing) breakdown in MLCs, including those with base metal electrodes (Ni). The third is the demonstration that any equivalent circuit model for real ferroelectric memories (FRAMs) must include a constant phase element (CPE). We then consider novel new prototype devices with industry potential for commercialization: three-dimensional [3D] DRAM capacitor trenches; piezoelectric nanotubes; and carbon nano-wire arrays with ferroelectric tips.
ISSN:1099-4734
2375-0448
DOI:10.1109/ISAF.2007.4393150