Ferroelectric properties of sol-gel derived Bi4-xLaxTi3O12 films prepared on Pt/Ti/SiO2/Si substrate

The ferroelectric properties of Bi 4-x La x Ti 3 O 12 (BLT) thin films deposited on Pt/Ti/SiO 2 /Si using sol-gel method have been studied. Their crystal structure, chemical composition and vibration modes were measured using x-ray thetas-2thetas scan, Electron probe micro-scope analyzer(EPMA), and...

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Bibliographic Details
Main Authors: Park, S.M., Baek, J.H., Pak, J.M., Nam, K.W., Seo, C.W., Cheong, H.S., Gwangseo Park
Format: Conference Proceeding
Language:English
Subjects:
Bismuth
Chemical analysis
Electrons
Fatigue
Ferroelectric materials
Polarization
Probes
Semiconductor thin films
Sputtering
Vibration measurement
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Summary:The ferroelectric properties of Bi 4-x La x Ti 3 O 12 (BLT) thin films deposited on Pt/Ti/SiO 2 /Si using sol-gel method have been studied. Their crystal structure, chemical composition and vibration modes were measured using x-ray thetas-2thetas scan, Electron probe micro-scope analyzer(EPMA), and Raman spectroscopy, respectively. Their orientations were domanantly (117) and (200). Various type of grains, lattice expansions and reductions are observed as a function of the content of La and the annealing temperature. The BLT0.25 had larger value of polarization and coercive field than other films, and showed poor fatigue property. However, BLT0.75 film kept a good fatigue property over 101 switching cycles. In this study, we have focused on understanding the features of polarization in terms of the microstructure and the distortion of the unit cell.
ISSN:1099-4734
2375-0448
DOI:10.1109/ISAF.2007.4393191