Preparation of Ir-Based Electrode Thin Films by Liquid-Delivery MOCVD

We report the preparation of Ir-based electrode thin films by liquid-delivery MOCVD using a vaporizer system. A novel liquid precursor, Ir(EtCp)(C 2 H 4 ) 2 , and etylcyclohexane (ECH) were used as a precursor and solvent, respectively. (111)-oriented Ir thin films with a root-mean-square surface ro...

Full description

Saved in:
Bibliographic Details
Main Authors: Fujisawa, H., Yamashita, D., Fukui, H., Shimizu, M., Tada, K.-i., Yamakawa, T., Kawano, K., Oshima, N.
Format: Conference Proceeding
Language:English
Subjects:
Electric resistance
Electrodes
Ferroelectric films
Ferroelectric materials
MOCVD
Solids
Solvents
Sputtering
Temperature
Transistors
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report the preparation of Ir-based electrode thin films by liquid-delivery MOCVD using a vaporizer system. A novel liquid precursor, Ir(EtCp)(C 2 H 4 ) 2 , and etylcyclohexane (ECH) were used as a precursor and solvent, respectively. (111)-oriented Ir thin films with a root-mean-square surface roughness of 2.2 nm and an electrical resistivity of 14 muOmega-cm were successfully obtained on SiO 2 /Si at 400degC. However, it was difficult to form IrO 2 films because oxygen was consumed for the decomposition of the solvent, ECH. The step coverage of-40% was obtained for Ir films on SiO 2 -stepped substrate with an aspect ratio of 0.7.
ISSN:1099-4734
2375-0448
DOI:10.1109/ISAF.2007.4393209