Low complexity RF-MEMS switch optimized for operation up to 120°C

This paper presents a RF-MEMS switch optimized for high temperature range of operation using a temperature stable metallization. The devices are fabricated on a silicon substrate in very low complexity process using only one metallization. The performed measurements characterize the properties of th...

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Bibliographic Details
Main Authors: Stehle, A., Siegel, C., Ziegler, V., Schonlinner, B., Prechtel, U., Thilmont, S., Seidel, H., Schmid, U.
Format: Conference Proceeding
Language:English
Subjects:
alloy
aluminium
bended beams
Communication switching
Creep
Dielectric substrates
Fabrication
Inorganic materials
Metallization
microwave
Power semiconductor switches
Radiofrequency microelectromechanical systems
RF-MEMS
Silicon
switch
temperature
Temperature distribution
thermal oxide
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Summary:This paper presents a RF-MEMS switch optimized for high temperature range of operation using a temperature stable metallization. The devices are fabricated on a silicon substrate in very low complexity process using only one metallization. The performed measurements characterize the properties of the metallization and also the properties of the entire switch in terms of creeping behaviour, RF performance and charging effects at different temperatures. A stable operation up to 120degC is demonstrated and the principle reliability of the switches is shown by 10 9 switching cycles.
DOI:10.1109/EMICC.2007.4412741