Design of NOR flash memory cells with high speed programming by utilizing an asymmetric Silicide(TiSi2) Drain

An unique not-OR (NOR) flash memory cell using an asymmetric Schottky barrier (SB) was designed to increase programming speed and driving current. An asymmetric SB NOR flash memory cell was proposed on the basis of the fundamental structure of the conventional NOR flash memory cells with a length of...

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Bibliographic Details
Main Authors: Kyeong-Rok Kim, Jung-Woo Lee, Sang-Su Park, Kae-Dal Kwack
Format: Conference Proceeding
Language:English
Subjects:
Application software
Current density
Flash memory
Flash memory cells
Immune system
Medical simulation
P-n junctions
Schottky barriers
Silicides
Titanium
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Summary:An unique not-OR (NOR) flash memory cell using an asymmetric Schottky barrier (SB) was designed to increase programming speed and driving current. An asymmetric SB NOR flash memory cell was proposed on the basis of the fundamental structure of the conventional NOR flash memory cells with a length of 90 nm. The programming speed and the driving current of the SB NOR flash memory cell with an asymmetric SB were simulated by using T-SUPREM4 and MEDICI. The simulation results showed that the heavily doped carriers existing in the titanium-disilicide Schottky drain can be used to increase programming speed of the SB NOR flash memory cell and that a decrease in the source/drain series resistance utilizing the silicide in the SB NOR flash memory cell help to increase driving current density.
ISSN:2162-7541
2162-755X
DOI:10.1109/ICASIC.2007.4415811