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An Approach to Cost-Effective, Robust, Large-Area Electronics using Monolithic Silicon
We have developed an approach to build large-area electronics from monolithic silicon integrated circuits. The method used deep reactive ion etching to structure a monolithic silicon substrate into a stretchable, two-dimensional, wired network that can be expanded to cover large planar or curved sur...
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Main Authors: | , , , , , , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Citations: | Items that cite this one |
Online Access: | Request full text |
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Summary: | We have developed an approach to build large-area electronics from monolithic silicon integrated circuits. The method used deep reactive ion etching to structure a monolithic silicon substrate into a stretchable, two-dimensional, wired network that can be expanded to cover large planar or curved surfaces to realize high-performance, large-area, monolithic silicon electronics in a cost-effective manner. This approach has applications in sensing, smart materials, electronic textile,RFID tag and microconcentrator solar cell manufacturing. |
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ISSN: | 0163-1918 2156-017X |
DOI: | 10.1109/IEDM.2007.4418906 |