Mechanism of Vfb roll-off with High Work function Metal Gate and Low Temperature Oxygen Incorporation to Achieve PMOS Band Edge Work function

V fb roll-off phenomena in high work function (WF) metal gate on high-k is successfully explained by progressive oxygen vacancy (V o + ) generation in high-k as bottom oxide scales. Based on this understanding, low temperature O incorporation (LTOI) process has been developed, which reduces PMOS V t...

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Bibliographic Details
Main Authors: Song, S.C., Park, C.S., Price, J., Burham, C., Choi, R., Wen, H.C., Choi, K., Tseng, H.H., Lee, B.H., Jammy, R.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Capacitors
Electrons
Hafnium oxide
High K dielectric materials
High-K gate dielectrics
MOSFET circuits
Oxidation
Temperature
Tin
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Summary:V fb roll-off phenomena in high work function (WF) metal gate on high-k is successfully explained by progressive oxygen vacancy (V o + ) generation in high-k as bottom oxide scales. Based on this understanding, low temperature O incorporation (LTOI) process has been developed, which reduces PMOS V t significantly by enriching high-k with O without increasing equivalent oxide thickness (EOT).
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2007.4418940