Measurements of Inter-and-Intra Device Transient Thermal Transport on SOI FETs

In this paper, we report the first resolving detailed thermal transients for CMOS devices. Furthermore we investigate different heat paths between and inside devices to reveal the importance of the thermal conductivity of the gate. This work is extended to study thermal transport within a sub-microm...

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Bibliographic Details
Main Authors: Solomon, P.M., Shamsa, M., Jenkins, K.A., D'Emic, C.P., Balandin, A.A., Haensch, W.
Format: Conference Proceeding
Language:English
Subjects:
CMOS technology
Delay
Density measurement
FETs
Heat transfer
Power measurement
Pulse measurements
Silicon on insulator technology
Temperature sensors
Thermal conductivity
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Summary:In this paper, we report the first resolving detailed thermal transients for CMOS devices. Furthermore we investigate different heat paths between and inside devices to reveal the importance of the thermal conductivity of the gate. This work is extended to study thermal transport within a sub-micrometer CMOS FET where we are able to detect the delayed heat pulse at the source due to heat generation in the drain. We show both by measurements and simulations that oxide does not afford good isolation and that the main cooling mechanism of SOI devices is to the gate, with transfer resistance playing an important role.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2007.4418978