Gatestacks for scalable high-performance FinFETs

Excellent performance (995 muA/mum at I off =94 n A/mum and V dd =lV) and short channel effect control are achieved for tall, narrow FinFETs without mobility enhancement. Near-ideal fin/gate profiles are achieved with standard 193 nm immersion lithography and dry etch. PVD TiN electrodes on Hf SiO d...

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Main Authors: Vellianitis, G., Petry, J., Pawlak, B.J., Duffy, R., Demand, M., Beckx, S., Mertens, S., Delabie, A., Vandeweyer, T., Delvaux, C., Leys, F., van Dal, M.J.H., Hikavyy, A., Rooyackers, R., Kaiser, M., Weemaes, R.G.R., Voogt, F., Roberts, H., Donnet, D., Biesemans, S., Jurczak, M., Lander, R.J.P., Witters, L., Curatola, G., Doornbos, G., Collaert, N., Jonville, C., Torregiani, C., Lai, L.-S.
Format: Conference Proceeding
Language:English
Subjects:
Atherosclerosis
Dielectrics
Dry etching
Electrodes
FinFETs
Hafnium
Lithography
MOS devices
Scalability
Tin
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Summary:Excellent performance (995 muA/mum at I off =94 n A/mum and V dd =lV) and short channel effect control are achieved for tall, narrow FinFETs without mobility enhancement. Near-ideal fin/gate profiles are achieved with standard 193 nm immersion lithography and dry etch. PVD TiN electrodes on Hf SiO dielectrics are shown to give improved NMOS performance over PEALD TiN whilst poorer conformality, for both dielectric and gate electrode, does not appear to impact scalability or performance. Excellent PMOS performance is achieved for both PEALD and PVD TiN. A new model for threshold voltage V T variability is shown to explain this dependence upon fin width and gate length.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2007.4419037