Route to Low Parasitic Resistance in MuGFETs with Silicon-Carbon Source/Drain: Integration of Novel Low Barrier Ni(M)Si:C Metal Silicides and Pulsed Laser Annealing

We report the demonstration of two distinct approaches to reduce parasitic resistances in MuGFETs with silicon-carbon (Si:C) S/D. First, the addition of dysprosium (Dy) in NiSi:C contacts reduces the electron barrier height by 38% on SiC. Device integration of the Ni(Dy)Si:C contacts provides a 30%...

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Main Authors: Lee, R.T.-P., Koh, A.T.-Y., Fang-Yue Liu, Wei-Wei Fang, Tsung-Yang Liow, Kian-Ming Tan, Poh-Chong Lim, Lim, A.E.-J., Ming Zhu, Keat-Mun Hoe, Chin-Hang Tung, Guo-Qiang Lo, Xincai Wang, Low, D.K.-Y., Samudra, G.S., Dong-Zhi Chi, Yee-Chia Yeo
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Capacitive sensors
Computer aided manufacturing
Contact resistance
Electrons
Erbium
Optical pulses
Programmable logic arrays
Silicides
Silicon
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Summary:We report the demonstration of two distinct approaches to reduce parasitic resistances in MuGFETs with silicon-carbon (Si:C) S/D. First, the addition of dysprosium (Dy) in NiSi:C contacts reduces the electron barrier height by 38% on SiC. Device integration of the Ni(Dy)Si:C contacts provides a 30% reduction in series resistance leading to improved I Dsat performance. Second, we also report the first demonstration of pulsed laser annealing (PLA) for MuGFETs with Si:C S/D for enhanced dopant activation, leading to ~50% lower series resistance. High carbon substitutional concentration (above 1.0%) in Si:C can be achieved with PLA for enhanced strain effects.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2007.4419038