Fabrication and characterization of suspended carbon nanotubes

We have developed a fast and straightforward technique to fabricate suspended carbon nanotube field effect transistors (CNT FETs) using pristine as-grown carbon nanotubes (unexposed to photoresist or solvents). CNT thin films were first grown on a 500 nm thick thermally oxidised Si substrate by chem...

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Bibliographic Details
Main Authors: Sangwan, V.K., Ballarotto, V.W., Fuhrer, M.S., Williams, E.D.
Format: Conference Proceeding
Language:English
Subjects:
Carbon nanotubes
Chemical vapor deposition
CNTFETs
Fabrication
FETs
Iron
Resists
Semiconductor thin films
Solvents
Sputtering
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Summary:We have developed a fast and straightforward technique to fabricate suspended carbon nanotube field effect transistors (CNT FETs) using pristine as-grown carbon nanotubes (unexposed to photoresist or solvents). CNT thin films were first grown on a 500 nm thick thermally oxidised Si substrate by chemical vapor deposition (CVD) using ferritin encapsulated iron nanoparticles as the catalyst.The technique was optimized using a two-step photolithographic process to fabricate raised steps of a certain height in both the source and drain electrodes near the channel.
DOI:10.1109/ISDRS.2007.4422518