Microelectromechanical (MEM) switch and inverter for digital IC applications

Microelectromechanical (MEM) switch and MEM switch-based inverter was proposed and fabricated using a CMOS-compatible poly-Si surface micromachining process. The key concept is developed that the MEM switch-based inverter with the same implementation as CMOS inverter has a high noise immunity and lo...

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Bibliographic Details
Main Authors: Weon Wi Jang, O Deuk Kwon, Jeong Oen Lee, Jun-Bo Yoon
Format: Conference Proceeding
Language:English
Subjects:
Application specific integrated circuits
CMOS technology
Digital integrated circuits
Fabrication
Inverters
Leakage current
Logic devices
Semiconductor films
Switches
Switching circuits
Online Access:Request full text
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Summary:Microelectromechanical (MEM) switch and MEM switch-based inverter was proposed and fabricated using a CMOS-compatible poly-Si surface micromachining process. The key concept is developed that the MEM switch-based inverter with the same implementation as CMOS inverter has a high noise immunity and low power dissipation because the MEM switch can clearly eliminate the leakage current when the device is off. The fabricated MEM switch showed ideal on/off characteristics with a sub-threshold swing of 4 m V/decade, an essentially zero off current, and a very high on/off current ratio over 10 s and also the MEM switch-based inverter showed ideal voltage transfer characteristics.
DOI:10.1109/ASSCC.2007.4425779